Fabrication and Characterization of Modulation-Doped ZnSe/(Zn,Cd)Se (110) Quantum Wells: A New System for Spin Coherence Studies

We describe the growth of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on (110) GaAs substrates. Unlike the well-known protocol for the epitaxy of ZnSe-based quantum structures on (001) GaAs, we find that the fabrication of quantum well structures on (110) GaAs requires significantly different growth conditions and sample architecture. We use magnetotransport measurements to confirm the formation of a two-dimensional electron gas in these samples, and then measure transverse electron spin relaxation times using time-resolved Faraday rotation. In contrast to expectations based upon known spin relaxation mechanisms, we find surprisingly little difference between the spin lifetimes in these (110)-oriented samples in comparison with (100)-oriented control samples.Comment: To appear in Journal of Superconductivity (Proceedings of 3rd Conference on Physics and Applications of Spin-dependent Phenomena in Semiconductors

Ferromagnetic imprinting of spin polarization in a semiconductor

We present a theory of the imprinting of the electron spin coherence and population in an n-doped semiconductor which forms a junction with a ferromagnet. The reflection of non-equilibrium semiconductor electrons at the interface provides a mechanism to manipulate the spin polarization vector. In the case of unpolarized excitation, this ballistic effect produces spontaneous electron spin coherence and nuclear polarization in the semiconductor, as recently observed by time-resolved Faraday rotation experiments. We investigate the dependence of the spin reflection on the Schottky barrier height and the doping concentration in the semiconductor and suggest control mechanisms for possible device applications.Comment: 4 pages with 2 figure

Electron Spin Injection at a Schottky Contact

We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy and semiconductor doping density. The effect of a spin-dependent interface resistance that results from a tunneling region at the contact/semiconductor interface is described. The model can serve as a guide for designing spin-injection experiments with regard to the interface properties and device structure.Comment: 4 pages, 4 figure

Spin Precession and Oscillations in Mesoscopic Systems

We compare and contrast magneto-transport oscillations in the fully quantum (single-electron coherent) and classical limits for a simple but illustrative model. In particular, we study the induced magnetization and spin current in a two-terminal double-barrier structure with an applied Zeeman field between the barriers and spin disequilibrium in the contacts. Classically, the spin current shows strong tunneling resonances due to spin precession in the region between the two barriers. However, these oscillations are distinguishable from those in the fully coherent case, for which a proper treatment of the electron phase is required. We explain the differences in terms of the presence or absence of coherent multiple wave reflections.Comment: 9 pages, 5 figure

Electric-field dependent spin diffusion and spin injection into semiconductors

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue in metals. In this regime there are two distinct spin diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude and spins can be transported over distances much greater than the low-field spin diffusion length.Comment: 5 pages, 3 eps figure

Spin diffusion and injection in semiconductor structures: Electric field effects

In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics and identified a high-field diffusive regime which has no analogue in metals. Here spin injection from a ferromagnet (FM) into a nonmagnetic semiconductor (NS) is extensively studied by applying this spin drift-diffusion equation to several typical injection structures such as FM/NS, FM/NS/FM, and FM/NS/NS structures. We find that in the high-field regime spin injection from a ferromagnet into a semiconductor is enhanced by several orders of magnitude. For injection structures with interfacial barriers, the electric field further enhances spin injection considerably. In FM/NS/FM structures high electric fields destroy the symmetry between the two magnets at low fields, where both magnets are equally important for spin injection, and spin injection becomes locally determined by the magnet from which carriers flow into the semiconductor. The field-induced spin injection enhancement should also be insensitive to the presence of a highly doped nonmagnetic semiconductor (NS$^+$) at the FM interface, thus FM/NS$^+$/NS structures should also manifest efficient spin injection at high fields. Furthermore, high fields substantially reduce the magnetoresistance observable in a recent experiment on spin injection from magnetic semiconductors

Optical Pumping in Ferromagnet-Semiconductor Heterostructures: Magneto-optics and Spin Transport

Epitaxial ferromagnetic metal - semiconductor heterostructures are investigated using polarization-dependent electroabsorption measurements on GaAs p-type and n-type Schottky diodes with embedded In1-xGaxAs quantum wells. We have conducted studies as a function of photon energy, bias voltage, magnetic field, and excitation geometry. For optical pumping with circularly polarized light at energies above the band edge of GaAs, photocurrents with spin polarizations on the order of 1 % flow from the semiconductor to the ferromagnet under reverse bias. For optical pumping at normal incidence, this polarization may be enhanced significantly by resonant excitation at the quantum well ground-state. Measurements in a side-pumping geometry, in which the ferromagnet can be saturated in very low magnetic fields, show hysteresis that is also consistent with spin-dependent transport. Magneto-optical effects that influence these measurements are discussed.Comment: PDF, 4 figures, 1 tabl

Spin oscillations in transient diffusion of a spin pulse in n-type semiconductor quantum wells

By studying the time and spatial evolution of a pulse of the spin polarization in $n$-type semiconductor quantum wells, we highlight the importance of the off-diagonal spin coherence in spin diffusion and transport. Spin oscillations and spin polarization reverse along the the direction of spin diffusion in the absence of the applied magnetic field are predicted from our investigation.Comment: 5 pages, 4 figures, accepted for publication in PR

Anomalous Hall effect in ferromagnetic semiconductors

We present a theory of the anomalous Hall effect in ferromagnetic (Mn,III)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wavefunction upon traversing closed paths on the spin-split Fermi surface of a ferromagnetic state. It can be applied equally well to any itinerant electron ferromagnet. The quantitative agreement between our theory and experimental data in both (In,Mn)As and (Ga,Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in diluted magnetic semiconductors.Comment: 4 pages, 2 figure